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Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control

Magnetization switching between parallel and antiparallel alignments of two magnetic layers in magnetic tunnel junctions (MTJs) is conventionally controlled either by an external magnetic field or by an electric current. Here, we report that the manipulation of magnetization switching and tunnel mag...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Liu, Houfang, Wang, Ran, Guo, Peng, Wen, Zhenchao, Feng, Jiafeng, Wei, Hongxiang, Han, Xiufeng, Ji, Yang, Zhang, Shufeng
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2015
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4677325/
https://ncbi.nlm.nih.gov/pubmed/26658213
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep18269
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