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Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control
Magnetization switching between parallel and antiparallel alignments of two magnetic layers in magnetic tunnel junctions (MTJs) is conventionally controlled either by an external magnetic field or by an electric current. Here, we report that the manipulation of magnetization switching and tunnel mag...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4677325/ https://ncbi.nlm.nih.gov/pubmed/26658213 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep18269 |
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