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Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions
While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, an...
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| Autores principales: | , , , , , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Nature Publishing Group
2014
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4179128/ https://ncbi.nlm.nih.gov/pubmed/25266219 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep06505 |
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