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Strain induced topological phase transitions in monolayer honeycomb structures of group-V binary compounds

We present first-principles calculations of electronic structures of a class of two-dimensional (2D) honeycomb structures of group-V binary compounds. Our results show these new 2D materials are stable semiconductors with direct or indirect band gaps. The band gap can be tuned by applying lattice st...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Nie, Yaozhuang, Rahman, Mavlanjan, Wang, Daowei, Wang, Can, Guo, Guanghua
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2015
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4674708/
https://ncbi.nlm.nih.gov/pubmed/26656257
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep17980
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