Llwytho...
Relation between bandgap and resistance drift in amorphous phase change materials
Memory based on phase change materials is currently the most promising candidate for bridging the gap in access time between memory and storage in traditional memory hierarchy. However, multilevel storage is still hindered by the so-called resistance drift commonly related to structural relaxation o...
Wedi'i Gadw mewn:
| Cyhoeddwyd yn: | Sci Rep |
|---|---|
| Prif Awduron: | , , , , |
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
Nature Publishing Group
2015
|
| Pynciau: | |
| Mynediad Ar-lein: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4664898/ https://ncbi.nlm.nih.gov/pubmed/26621533 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep17362 |
| Tagiau: |
Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
|