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Relation between bandgap and resistance drift in amorphous phase change materials
Memory based on phase change materials is currently the most promising candidate for bridging the gap in access time between memory and storage in traditional memory hierarchy. However, multilevel storage is still hindered by the so-called resistance drift commonly related to structural relaxation o...
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| 出版年: | Sci Rep |
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| 主要な著者: | , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Nature Publishing Group
2015
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4664898/ https://ncbi.nlm.nih.gov/pubmed/26621533 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep17362 |
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