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Structural and electrical properties of catalyst-free Si-doped InAs nanowires formed on Si(111)
We report structural and electrical properties of catalyst-free Si-doped InAs nanowires (NWs) formed on Si(111) substrates. The average diameter of Si-doped InAs NWs was almost similar to that of undoped NWs with a slight increase in height. In the previous works, the shape and size of InAs NWs form...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4652218/ https://ncbi.nlm.nih.gov/pubmed/26581781 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep16652 |
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