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Self-Heating Effects In Polysilicon Source Gated Transistors

Source-gated transistors (SGTs) are thin-film devices which rely on a potential barrier at the source to achieve high gain, tolerance to fabrication variability, and low series voltage drop, relevant to a multitude of energy-efficient, large-area, cost effective applications. The current through the...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Sporea, R. A., Burridge, T., Silva, S. R. P.
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2015
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4650605/
https://ncbi.nlm.nih.gov/pubmed/26351099
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep14058
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