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Self-Heating Effects In Polysilicon Source Gated Transistors
Source-gated transistors (SGTs) are thin-film devices which rely on a potential barrier at the source to achieve high gain, tolerance to fabrication variability, and low series voltage drop, relevant to a multitude of energy-efficient, large-area, cost effective applications. The current through the...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4650605/ https://ncbi.nlm.nih.gov/pubmed/26351099 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep14058 |
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