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Strain induced piezoelectric effect in black phosphorus and MoS(2) van der Waals heterostructure
The structural, electronic, transport and optical properties of black phosphorus/MoS(2) (BP/MoS(2)) van der Waals (vdw) heterostructure are investigated by using first principles calculations. The band gap of BP/MoS(2) bilayer decreases with the applied normal compressive strain and a semiconductor-...
Gorde:
| Argitaratua izan da: | Sci Rep |
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| Egile Nagusiak: | , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Nature Publishing Group
2015
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| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4639735/ https://ncbi.nlm.nih.gov/pubmed/26553370 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep16448 |
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