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Strain-Modulated Band Engineering in Two-Dimensional Black Phosphorus/MoS(2) van der Waals Heterojunction

[Image: see text] We investigate the band shift and band alignment of two-dimensional (2D) black phosphorus (BP)/MoS(2) van der Waals heterojunction (vdW HJ) via uniaxial strain in terms of first-principles calculations and atomic-bond-relaxation method. We find that the band gap of 2D BP/MoS(2) HJ...

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Detalhes bibliográficos
Publicado no:ACS Omega
Main Authors: Liao, Chengwei, Zhao, Yipeng, Ouyang, Gang
Formato: Artigo
Idioma:Inglês
Publicado em: American Chemical Society 2018
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6644261/
https://ncbi.nlm.nih.gov/pubmed/31458144
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.8b01767
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