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Growth of Silicon Nanosheets Under Diffusion-Limited Aggregation Environments
The two-dimensional (2D) growth of cubic-structured (silicon) Si nanosheets (SiNSs) was investigated. Freestanding, single-crystalline SiNSs with a thickness of 5–20 nm were grown on various Si substrates under an atmospheric chemical vapor deposition process. Systematic investigation indicated that...
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| Опубликовано в: : | Nanoscale Res Lett |
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| Главные авторы: | , , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Springer US
2015
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4627974/ https://ncbi.nlm.nih.gov/pubmed/26518028 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-1138-2 |
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