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New Insights on the Burstein-Moss Shift and Band Gap Narrowing in Indium-Doped Zinc Oxide Thin Films
The Burstein-Moss shift and band gap narrowing of sputtered indium-doped zinc oxide (IZO) thin films are investigated as a function of carrier concentrations. The optical band gap shifts below the carrier concentration of 5.61 × 10(19) cm(-3) are well-described by the Burstein-Moss model. For carrie...
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| Publicat a: | PLoS One |
|---|---|
| Autors principals: | , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Public Library of Science
2015
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4627753/ https://ncbi.nlm.nih.gov/pubmed/26517364 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1371/journal.pone.0141180 |
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