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Ultraviolet Lasers Realized via Electrostatic Doping Method
P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by emplo...
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| Pubblicato in: | Sci Rep |
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| Autori principali: | , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Publishing Group
2015
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4555170/ https://ncbi.nlm.nih.gov/pubmed/26324054 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep13641 |
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