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Ultraviolet Lasers Realized via Electrostatic Doping Method
P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by emplo...
Αποθηκεύτηκε σε:
| Τόπος έκδοσης: | Sci Rep |
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| Κύριοι συγγραφείς: | , , , , , , |
| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
Nature Publishing Group
2015
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| Θέματα: | |
| Διαθέσιμο Online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4555170/ https://ncbi.nlm.nih.gov/pubmed/26324054 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep13641 |
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