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Ultraviolet Lasers Realized via Electrostatic Doping Method
P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by emplo...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4555170/ https://ncbi.nlm.nih.gov/pubmed/26324054 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep13641 |
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