Ultraviolet Lasers Realized via Electrostatic Doping Method

P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by emplo...

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Xehetasun bibliografikoak
Argitaratua izan da:Sci Rep
Egile Nagusiak: Liu, X. Y., Shan, C. X., Zhu, H., Li, B. H., Jiang, M. M., Yu, S. F., Shen, D. Z.
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Nature Publishing Group 2015
Gaiak:
Article
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC4555170/
https://ncbi.nlm.nih.gov/pubmed/26324054
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep13641
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