Ultraviolet Lasers Realized via Electrostatic Doping Method

P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by emplo...

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Udgivet i:Sci Rep
Main Authors: Liu, X. Y., Shan, C. X., Zhu, H., Li, B. H., Jiang, M. M., Yu, S. F., Shen, D. Z.
Format: Artigo
Sprog:Inglês
Udgivet: Nature Publishing Group 2015
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Article
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4555170/
https://ncbi.nlm.nih.gov/pubmed/26324054
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep13641
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