Ultraviolet Lasers Realized via Electrostatic Doping Method

P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by emplo...

Disgrifiad llawn

Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Cyhoeddwyd yn:Sci Rep
Prif Awduron: Liu, X. Y., Shan, C. X., Zhu, H., Li, B. H., Jiang, M. M., Yu, S. F., Shen, D. Z.
Fformat: Artigo
Iaith:Inglês
Cyhoeddwyd: Nature Publishing Group 2015
Pynciau:
Article
Mynediad Ar-lein:https://ncbi.nlm.nih.gov/pmc/articles/PMC4555170/
https://ncbi.nlm.nih.gov/pubmed/26324054
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep13641
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