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CMOS-Compatible Top-Down Fabrication of Periodic SiO(2) Nanostructures using a Single Mask
We propose a CMOS-compatible top-down fabrication technique of highly-ordered and periodic SiO(2) nanostructures using a single amorphous silicon (α-Si) mask layer. The α-Si mask pattern is precisely transferred into the underlying SiO(2) substrate material with a high fidelity by a novel top-down f...
Gorde:
| Argitaratua izan da: | Nanoscale Res Lett |
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| Egile Nagusiak: | , , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Springer US
2015
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| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4549353/ https://ncbi.nlm.nih.gov/pubmed/26306538 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-1046-5 |
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