In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most critical failure mechanisms for microelectronic devices. The aggressive scaling of feature sizes, both on devices and interconnects, leads to serious challenges to ensure the required product reliability...

Deskribapen osoa

Gorde:
Xehetasun bibliografikoak
Argitaratua izan da:J Vis Exp
Egile Nagusiak: Liao, Zhongquan, Gall, Martin, Yeap, Kong Boon, Sander, Christoph, Clausner, André, Mühle, Uwe, Gluch, Jürgen, Standke, Yvonne, Aubel, Oliver, Beyer, Armand, Hauschildt, Meike, Zschech, Ehrenfried
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: MyJove Corporation 2015
Gaiak:
Engineering
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC4544509/
https://ncbi.nlm.nih.gov/pubmed/26167933
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3791/52447
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