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Capacitance-Voltage Characteristics of Thin-film Transistors Fabricated with Solution-Processed Semiconducting Carbon Nanotube Networks
We report the capacitance-voltage (C-V) measurements on thin-film transistors (TFTs) using solution-processed semiconducting carbon nanotube networks with different densities and channel lengths. From the measured C-V characteristics, gate capacitance and field-effect mobility (up to ~50 cm(2) V(−1)...
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| Udgivet i: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Springer US
2015
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4501368/ https://ncbi.nlm.nih.gov/pubmed/26168866 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0999-8 |
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