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Seed/Catalyst-Free Growth of Gallium-Based Compound Materials on Graphene on Insulator by Electrochemical Deposition at Room Temperature
We report the growth of gallium-based compounds, i.e., gallium oxynitride (GaON) and gallium oxide (Ga(2)O(3)) on multilayer graphene (MLG) on insulator using a mixture of ammonium nitrate (NH(4)NO(3)) and gallium nitrate (Ga(NO(3))(3)) by electrochemical deposition (ECD) method at room temperature...
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| Publié dans: | Nanoscale Res Lett |
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| Auteurs principaux: | , , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Springer US
2015
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4451189/ https://ncbi.nlm.nih.gov/pubmed/26055478 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0943-y |
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