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Carrier type inversion in quasi-free standing graphene: studies of local electronic and structural properties
We investigate the local surface potential and Raman characteristics of as-grown and ex-situ hydrogen intercalated quasi-free standing graphene on 4H-SiC(0001) grown by chemical vapor deposition. Upon intercalation, transport measurements reveal a change in the carrier type from n- to p-type, accomp...
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| Izdano u: | Sci Rep |
|---|---|
| Glavni autori: | , , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Nature Publishing Group
2015
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| Teme: | |
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4450755/ https://ncbi.nlm.nih.gov/pubmed/26030153 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep10505 |
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