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High-mobility and air-stable single-layer WS(2) field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films

An emerging electronic material as one of transition metal dichalcogenides (TMDCs), tungsten disulfide (WS(2)) can be exfoliated as an atomically thin layer and can compensate for the drawback of graphene originating from a gapless band structure. A direct bandgap, which is obtainable in single-laye...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Veröffentlicht in:Sci Rep
Hauptverfasser: Iqbal, M Waqas, Iqbal, M Zahir, Khan, M Farooq, Shehzad, M Arslan, Seo, Yongho, Park, Jong Hyun, Hwang, Chanyong, Eom, Jonghwa
Format: Artigo
Sprache:Inglês
Veröffentlicht: Nature Publishing Group 2015
Schlagworte:
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4450543/
https://ncbi.nlm.nih.gov/pubmed/26030008
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep10699
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