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High-mobility and air-stable single-layer WS(2) field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films
An emerging electronic material as one of transition metal dichalcogenides (TMDCs), tungsten disulfide (WS(2)) can be exfoliated as an atomically thin layer and can compensate for the drawback of graphene originating from a gapless band structure. A direct bandgap, which is obtainable in single-laye...
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| 出版年: | Sci Rep |
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| 主要な著者: | , , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Nature Publishing Group
2015
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4450543/ https://ncbi.nlm.nih.gov/pubmed/26030008 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep10699 |
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