Caricamento...

High-mobility and air-stable single-layer WS(2) field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films

An emerging electronic material as one of transition metal dichalcogenides (TMDCs), tungsten disulfide (WS(2)) can be exfoliated as an atomically thin layer and can compensate for the drawback of graphene originating from a gapless band structure. A direct bandgap, which is obtainable in single-laye...

Descrizione completa

Salvato in:
Dettagli Bibliografici
Pubblicato in:Sci Rep
Autori principali: Iqbal, M Waqas, Iqbal, M Zahir, Khan, M Farooq, Shehzad, M Arslan, Seo, Yongho, Park, Jong Hyun, Hwang, Chanyong, Eom, Jonghwa
Natura: Artigo
Lingua:Inglês
Pubblicazione: Nature Publishing Group 2015
Soggetti:
Accesso online:https://ncbi.nlm.nih.gov/pmc/articles/PMC4450543/
https://ncbi.nlm.nih.gov/pubmed/26030008
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep10699
Tags: Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne! !