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Electronic Band Structure and Sub-band-gap Absorption of Nitrogen Hyperdoped Silicon
We investigated the atomic geometry, electronic band structure, and optical absorption of nitrogen hyperdoped silicon based on first-principles calculations. The results show that all the paired nitrogen defects we studied do not introduce intermediate band, while most of single nitrogen defects can...
שמור ב:
| הוצא לאור ב: | Sci Rep |
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| Main Authors: | , , , , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Nature Publishing Group
2015
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4444955/ https://ncbi.nlm.nih.gov/pubmed/26012369 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep10513 |
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