Lataa...

Electronic Band Structure and Sub-band-gap Absorption of Nitrogen Hyperdoped Silicon

We investigated the atomic geometry, electronic band structure, and optical absorption of nitrogen hyperdoped silicon based on first-principles calculations. The results show that all the paired nitrogen defects we studied do not introduce intermediate band, while most of single nitrogen defects can...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Sci Rep
Päätekijät: Zhu, Zhen, Shao, Hezhu, Dong, Xiao, Li, Ning, Ning, Bo-Yuan, Ning, Xi-Jing, Zhao, Li, Zhuang, Jun
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Nature Publishing Group 2015
Aiheet:
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC4444955/
https://ncbi.nlm.nih.gov/pubmed/26012369
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep10513
Tagit: Lisää tagi
Ei tageja, Lisää ensimmäinen tagi!