Llwytho...
Strain in a silicon-on-insulator nanostructure revealed by 3D x-ray Bragg ptychography
Progresses in the design of well-defined electronic band structure and dedicated functionalities rely on the high control of complex architectural device nano-scaled structures. This includes the challenging accurate description of strain fields in crystalline structures, which requires non invasive...
Wedi'i Gadw mewn:
| Cyhoeddwyd yn: | Sci Rep |
|---|---|
| Prif Awduron: | , , , , , |
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
Nature Publishing Group
2015
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| Pynciau: | |
| Mynediad Ar-lein: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4434906/ https://ncbi.nlm.nih.gov/pubmed/25984829 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep09827 |
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