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Four-state ferroelectric spin-valve
Spin-valves had empowered the giant magnetoresistance (GMR) devices to have memory. The insertion of thin antiferromagnetic (AFM) films allowed two stable magnetic field-induced switchable resistance states persisting in remanence. In this letter, we show that, without the deliberate introduction of...
Enregistré dans:
| Publié dans: | Sci Rep |
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| Auteurs principaux: | , , , , , , , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Nature Publishing Group
2015
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4426701/ https://ncbi.nlm.nih.gov/pubmed/25961513 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep09749 |
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