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A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors
For several years, graphene has been the focus of much attention due to its peculiar characteristics, and it is now considered to be a representative 2-dimensional (2D) material. Even though many research groups have studied on the graphene, its intrinsic nature of a zero band-gap, limits its use in...
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| Publicado no: | Nanoscale Res Lett |
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| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4385225/ https://ncbi.nlm.nih.gov/pubmed/25852410 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0827-1 |
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