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Defect-Induced Photoluminescence Blinking of Single Epitaxial InGaAs Quantum Dots
Here we report two types of defect-induced photoluminescence (PL) blinking behaviors observed in single epitaxial InGaAs quantum dots (QDs). In the first type of PL blinking, the “off” period is caused by the trapping of hot electrons from the higher-lying excited state (absorption state) to the def...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4354043/ https://ncbi.nlm.nih.gov/pubmed/25754220 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep08898 |
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