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Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode

We report on the measurement of drift properties of electrons and holes in a CdTe diode grown by the travelling heating method (THM). Mobility and lifetime of both charge carriers has been measured independently at room temperature and fixed bias voltage using charge integration readout electronics....

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Detalhes bibliográficos
Publicado no:J Instrum
Main Authors: Ariño-Estrada, G., Chmeissani, M., de Lorenzo, G., Kolstein, M., Puigdengoles, C., García, J., Cabruja, E.
Formato: Artigo
Idioma:Inglês
Publicado em: 2014
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Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4340550/
https://ncbi.nlm.nih.gov/pubmed/25729405
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1088/1748-0221/9/12/C12032
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