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Suppressing spontaneous polarization of p-GaN by graphene oxide passivation: Augmented light output of GaN UV-LED
GaN-based ultraviolet (UV) LEDs are widely used in numerous applications, including white light pump sources and high-density optical data storage. However, one notorious issue is low hole injection rate in p-type transport layer due to poorly activated holes and spontaneous polarization, giving ris...
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| Vydáno v: | Sci Rep |
|---|---|
| Hlavní autoři: | , , , , , , , , , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group
2015
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4293595/ https://ncbi.nlm.nih.gov/pubmed/25586148 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep07778 |
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