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Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

The layered materials such as graphene have attracted considerable interest for future electronics. Here we report the vertical integration of multi-heterostructures of layered materials to enable high current density vertical field-effect transistors (VFETs). An n-channel VFET is created by sandwic...

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Dades bibliogràfiques
Publicat a:Nat Mater
Autors principals: Yu, Woo Jong, Li, Zheng, Zhou, Hailong, Chen, Yu, Wang, Yang, Huang, Yu, Duan, Xiangfeng
Format: Artigo
Idioma:Inglês
Publicat: 2012
Matèries:
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC4249642/
https://ncbi.nlm.nih.gov/pubmed/23241535
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/nmat3518
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