Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory via Buffering Interfacial Polarization Fluctuation

Ferroelectric organic field-effect transistors (Fe-OFETs) have been attractive for a variety of non-volatile memory device applications. One of the critical issues of Fe-OFETs is the improvement of carrier mobility in semiconducting channels. In this article, we propose a novel interfacial buffering...

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Publicat a:Sci Rep
Autors principals: Sun, Huabin, Wang, Qijing, Li, Yun, Lin, Yen-Fu, Wang, Yu, Yin, Yao, Xu, Yong, Liu, Chuan, Tsukagoshi, Kazuhito, Pan, Lijia, Wang, Xizhang, Hu, Zheng, Shi, Yi
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group 2014
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Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC4245676/
https://ncbi.nlm.nih.gov/pubmed/25428665
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep07227
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