Sun, H., Wang, Q., Li, Y., Lin, Y., Wang, Y., Yin, Y., . . . Shi, Y. (2014). Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory via Buffering Interfacial Polarization Fluctuation. Sci Rep.
Chicago Style CitationSun, Huabin, et al. "Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory Via Buffering Interfacial Polarization Fluctuation." Sci Rep 2014.
Cita MLASun, Huabin, et al. "Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory Via Buffering Interfacial Polarization Fluctuation." Sci Rep 2014.
Atenció: Aquestes cites poden no estar 100% correctes.