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Heteroepitaxial growth of TiN film on MgO (100) by reactive magnetron sputtering
TiN thin films were deposited on MgO (100) substrates at different substrate temperatures using rf sputtering with Ar/N(2) ratio of about 10. At 700°C, the growth rate of TiN was approximately 0.05 μm/h. The structural and electrical properties of TiN thin films were characterized with x-ray diffrac...
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| Autores principales: | , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4199059/ https://ncbi.nlm.nih.gov/pubmed/25324706 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-551 |
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