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Patterned growth of carbon nanotubes over vertically aligned silicon nanowire bundles for achieving uniform field emission
A fabrication strategy is proposed to enable precise coverage of as-grown carbon nanotube (CNT) mats atop vertically aligned silicon nanowire (VA-SiNW) bundles in order to realize a uniform bundle array of CNT-SiNW heterojunctions over a large sample area. No obvious electrical degradation of as-fab...
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| Hlavní autoři: | , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer
2014
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4189046/ https://ncbi.nlm.nih.gov/pubmed/25298758 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-540 |
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