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Geometrical Structure and Interface Dependence of Bias Stress Induced Threshold Voltage Shift in C(60)-Based OFETs
[Image: see text] The influence of the nature of interface between organic semiconductor and gate dielectric on bias stress electrical stability of n-type C(60)-based organic field effect transistors (OFETs) was studied. The bias stress induced threshold voltage (V(th)) shift was found to depend cri...
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| Glavni autori: | , , , , , |
|---|---|
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
American
Chemical Society
2014
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| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4159991/ https://ncbi.nlm.nih.gov/pubmed/25142130 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/am5032192 |
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