APA citiranje

Ahmed, R., Kadashchuk, A., Simbrunner, C., Schwabegger, G., Baig, M. A., & Sitter, H. (2014). Geometrical Structure and Interface Dependence of Bias Stress Induced Threshold Voltage Shift in C(60)-Based OFETs. American Chemical Society.

Citação norma Chicago

Ahmed, Rizwan, Andrey Kadashchuk, Clemens Simbrunner, Günther Schwabegger, Muhammad Aslam Baig, and Helmut Sitter. Geometrical Structure and Interface Dependence of Bias Stress Induced Threshold Voltage Shift in C(60)-Based OFETs. American Chemical Society, 2014.

MLA citiranje

Ahmed, Rizwan, et al. Geometrical Structure and Interface Dependence of Bias Stress Induced Threshold Voltage Shift in C(60)-Based OFETs. American Chemical Society, 2014.