Ahmed, R., Kadashchuk, A., Simbrunner, C., Schwabegger, G., Baig, M. A., & Sitter, H. (2014). Geometrical Structure and Interface Dependence of Bias Stress Induced Threshold Voltage Shift in C(60)-Based OFETs. American Chemical Society.

Ahmed, Rizwan, Andrey Kadashchuk, Clemens Simbrunner, Günther Schwabegger, Muhammad Aslam Baig, and Helmut Sitter. Geometrical Structure and Interface Dependence of Bias Stress Induced Threshold Voltage Shift in C(60)-Based OFETs. American Chemical Society, 2014.

Ahmed, Rizwan, et al. Geometrical Structure and Interface Dependence of Bias Stress Induced Threshold Voltage Shift in C(60)-Based OFETs. American Chemical Society, 2014.