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In situ observation of step-edge in-plane growth of graphene in a STEM
It is extremely difficult to control the growth orientation of the graphene layer in comparison to Si or III–V semiconductors. Here we report a direct observation of graphene growth and domain boundary formation in a scanning transmission electron microscope, with residual hydrocarbon in the microsc...
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| Main Authors: | , , , , , , |
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| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Nature Pub. Group
2014
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| Teme: | |
| Online dostop: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4059939/ https://ncbi.nlm.nih.gov/pubmed/24887183 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms5055 |
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