טוען...
In situ observation of step-edge in-plane growth of graphene in a STEM
It is extremely difficult to control the growth orientation of the graphene layer in comparison to Si or III–V semiconductors. Here we report a direct observation of graphene growth and domain boundary formation in a scanning transmission electron microscope, with residual hydrocarbon in the microsc...
שמור ב:
| Main Authors: | , , , , , , |
|---|---|
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Nature Pub. Group
2014
|
| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4059939/ https://ncbi.nlm.nih.gov/pubmed/24887183 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms5055 |
| תגים: |
הוספת תג
אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!
|