Charge transport mechanisms and memory effects in amorphous TaN(x) thin films

Amorphous semiconducting materials have unique electrical properties that may be beneficial in nanoelectronics, such as low leakage current, charge memory effects, and hysteresis functionality. However, electrical characteristics between different or neighboring regions in the same amorphous nanostr...

Deskribapen osoa

Gorde:
Xehetasun bibliografikoak
Egile Nagusiak: Spyropoulos-Antonakakis, Nikolaos, Sarantopoulou, Evangelia, Drazic, Goran, Kollia, Zoe, Christofilos, Dimitrios, Kourouklis, Gerasimos, Palles, Dimitrios, Cefalas, Alkiviadis Constantinos
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Springer 2013
Gaiak:
Nano Express
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC4016540/
https://ncbi.nlm.nih.gov/pubmed/24134740
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-432
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