Charge transport mechanisms and memory effects in amorphous TaN(x) thin films

Amorphous semiconducting materials have unique electrical properties that may be beneficial in nanoelectronics, such as low leakage current, charge memory effects, and hysteresis functionality. However, electrical characteristics between different or neighboring regions in the same amorphous nanostr...

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Bibliografske podrobnosti
Main Authors: Spyropoulos-Antonakakis, Nikolaos, Sarantopoulou, Evangelia, Drazic, Goran, Kollia, Zoe, Christofilos, Dimitrios, Kourouklis, Gerasimos, Palles, Dimitrios, Cefalas, Alkiviadis Constantinos
Format: Artigo
Jezik:Inglês
Izdano: Springer 2013
Teme:
Nano Express
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC4016540/
https://ncbi.nlm.nih.gov/pubmed/24134740
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-432
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