Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits

Tuning the threshold voltage of a transistor is crucial for realizing robust digital circuits. For silicon transistors, the threshold voltage can be accurately controlled by doping. However, it remains challenging to tune the threshold voltage of single-wall nanotube (SWNT) thin-film transistors. He...

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Autors principals: Wang, Huiliang, Wei, Peng, Li, Yaoxuan, Han, Jeff, Lee, Hye Ryoung, Naab, Benjamin D., Liu, Nan, Wang, Chenggong, Adijanto, Eric, Tee, Benjamin C.-K., Morishita, Satoshi, Li, Qiaochu, Gao, Yongli, Cui, Yi, Bao, Zhenan
Format: Artigo
Idioma:Inglês
Publicat: National Academy of Sciences 2014
Matèries:
Physical Sciences
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC3977307/
https://ncbi.nlm.nih.gov/pubmed/24639537
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1320045111
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