Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits

Tuning the threshold voltage of a transistor is crucial for realizing robust digital circuits. For silicon transistors, the threshold voltage can be accurately controlled by doping. However, it remains challenging to tune the threshold voltage of single-wall nanotube (SWNT) thin-film transistors. He...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Main Authors: Wang, Huiliang, Wei, Peng, Li, Yaoxuan, Han, Jeff, Lee, Hye Ryoung, Naab, Benjamin D., Liu, Nan, Wang, Chenggong, Adijanto, Eric, Tee, Benjamin C.-K., Morishita, Satoshi, Li, Qiaochu, Gao, Yongli, Cui, Yi, Bao, Zhenan
Formato: Artigo
Idioma:Inglês
Publicado em: National Academy of Sciences 2014
Assuntos:
Physical Sciences
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3977307/
https://ncbi.nlm.nih.gov/pubmed/24639537
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1320045111
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!

Registos relacionados