Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits

Tuning the threshold voltage of a transistor is crucial for realizing robust digital circuits. For silicon transistors, the threshold voltage can be accurately controlled by doping. However, it remains challenging to tune the threshold voltage of single-wall nanotube (SWNT) thin-film transistors. He...

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Detaylı Bibliyografya
Asıl Yazarlar: Wang, Huiliang, Wei, Peng, Li, Yaoxuan, Han, Jeff, Lee, Hye Ryoung, Naab, Benjamin D., Liu, Nan, Wang, Chenggong, Adijanto, Eric, Tee, Benjamin C.-K., Morishita, Satoshi, Li, Qiaochu, Gao, Yongli, Cui, Yi, Bao, Zhenan
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: National Academy of Sciences 2014
Konular:
Physical Sciences
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC3977307/
https://ncbi.nlm.nih.gov/pubmed/24639537
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1320045111
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