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Valence Band Structure of InAs(1−x)Bi(x) and InSb(1−x)Bi(x) Alloy Semiconductors Calculated Using Valence Band Anticrossing Model
The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs(1−x)Bi(x) and InSb(1−x)Bi(x) alloy systems. It is found that both the heavy/light hole, and spin-orbit split E (+) levels move upwards in energy with an increase in Bi conten...
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| Autori principali: | , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Hindawi Publishing Corporation
2014
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3925516/ https://ncbi.nlm.nih.gov/pubmed/24592181 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1155/2014/704830 |
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