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Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures
Light extraction efficiency (LEE) of AlGaN-based nanorod deep ultraviolet (UV) light-emitting diodes (LEDs) is numerically investigated using three-dimensional finite-difference time-domain simulations. LEE of deep UV LEDs is limited by strong light absorption in the p-GaN contact layer and total in...
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| Autor principal: | |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2014
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| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3917593/ https://ncbi.nlm.nih.gov/pubmed/24495598 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-58 |
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