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Role of Ge:As ratio in controlling the light-induced response of a-Ge(x)As(35−x)Se(65) thin films
In this paper, we present interesting results on the quantification of photodarkening (PD), photobleaching (PB) and transient PD (TPD) in a-Ge(x)As(35−x)Se(65) thin films as a function of network rigidity. Composition dependent light-induced responses of these samples indicate that there exist two p...
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| Autors principals: | , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2014
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3916963/ https://ncbi.nlm.nih.gov/pubmed/24504158 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep04029 |
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