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Visible and Infra-red Light Emission in Boron-Doped Wurtzite Silicon Nanowires
Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits its efficiency as a light emitter. Here we show the light emission properties of boron-doped wurtzite silicon nanowires m...
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| Main Authors: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2014
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3884225/ https://ncbi.nlm.nih.gov/pubmed/24398782 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep03603 |
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