Cargando...
Gate-tunable carbon nanotube–MoS(2) heterojunction p-n diode
The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-per...
Gardado en:
| Main Authors: | , , , , , , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
National Academy of Sciences
2013
|
| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3831469/ https://ncbi.nlm.nih.gov/pubmed/24145425 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1317226110 |
| Tags: |
Engadir etiqueta
Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!
|