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Gate-tunable carbon nanotube–MoS(2) heterojunction p-n diode
The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-per...
Tallennettuna:
| Päätekijät: | , , , , , , , |
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| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
National Academy of Sciences
2013
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3831469/ https://ncbi.nlm.nih.gov/pubmed/24145425 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1317226110 |
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