Gate-tunable carbon nanotube–MoS(2) heterojunction p-n diode

The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-per...

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Bibliographic Details
Main Authors: Jariwala, Deep, Sangwan, Vinod K., Wu, Chung-Chiang, Prabhumirashi, Pradyumna L., Geier, Michael L., Marks, Tobin J., Lauhon, Lincoln J., Hersam, Mark C.
Format: Artigo
Language:Inglês
Published: National Academy of Sciences 2013
Subjects:
Physical Sciences
Online Access:https://ncbi.nlm.nih.gov/pmc/articles/PMC3831469/
https://ncbi.nlm.nih.gov/pubmed/24145425
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1317226110
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